Infrared Spectroscopy of GaAs Doped with Mn

Infrared Spectral Detectivity of Cr‐doped GaAs

Suppression of electron spin relaxation in Mn-doped GaAs.

We report a surprisingly long spin relaxation time of electrons in Mn-doped p-GaAs. The spin relaxation time scales with the optical pumping and increases from 12 ns in the dark to 160 ns upon saturation. This behavior is associated with the difference in spin relaxation rates of electrons precessing in the fluctuating fields of ionized or neutral Mn acceptors, respectively. For the latter, the...

Magnetotransport in ferromagnetic Schottky diodes made of Mn-doped GaAs

SPIN-DEPENDENT TRANSPORT IN Mn DOPED GaAs AND GaN DIODES

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNLOGY P.O. BOX 1000, FI-02015 TKK http://www.tkk.fi Author Heikki Holmberg Name of the dissertation Spin-dependent transport in Mn Doped GaAs and GaN diodes Manuscript submitted 16.11.2007 Manuscript revised 4.2.2008 Date of the defence 14.3.2008 Monograph Article dissertation (summary + original articles) Faculty Faculty of Electronics, Commu...

Interaction of Mn with GaAs and InSb

The deposition of Mn on to reconstructed InSb and GaAs surfaces, without coincident As or Sb flux, has been studied by reflection high energy electron diffraction, atomic force microscopy and scanning tunnelling microscopy. On both Gaand As-terminated GaAs(0 0 1), (2× n) Mn-induced reconstruction domains arise with n = 2 for the most well ordered reconstructions. On the Ga-terminated (4× 6), th...